WebThe invention describes a method for the selective dry etching of tantalum and tantalum nitride films. Tantalum nitride layers ( 30 ) are often used in semiconductor manufacturing. The semiconductor substrate is exposed to a reducing plasma chemistry which passivates any exposed copper ( 40 ). The tantalum or tantalum nitride films are selectively … WebDec 1, 2010 · The dry etching characteristics of the TaN/HfO2 gate stack structure using Cl2/Ar, Cl2/SF6/Ar and Cl2/SF6/O2/Ar inductively coupled plasmas (ICPs) were investigated and the etch rates of the TaN ...
Selective dry etching of tantalum and tantalum nitride - Texas ...
WebTantalum : Tin : Titanium : Titanium/Tungsten : Tungsten : Turpentine : Vanadium : Westinghouse Etchant (Si Polish Etch) ... Aluminum Etchant Type A (Transene Co., Inc.) For VLSI aluminum etching, there is available a pre-mixed phosphoric/acetic acid mixture. Etch rate: ~ 100 Å/sec at 50ºC. Corrosive. Avoid contact with eyes, skin and ... WebIf you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at [email protected] or call us at (703) … mary bell sequim
Dry Etch - TU Delft
WebIn one embodiment, the present invention relates to a method of etching tantalum disposed over a dielectric layer, involving etching at least a portion of the tantalum using a tantalum etch gas mixture containing from about 300 sccm to about 400 sccm of CF 4 and about 200 sccm to about 600 sccm of oxygen at a temperature from about 100° C. to about 150° C. … WebJul 12, 2005 · The invention describes a method for the selective dry etching of tantalum and tantalum nitride films. Tantalum nitride layers (30) are often used in semiconductor … Webuseful device structures.1–8 Tantalum etching is also of inter-est for the decontamination and decommissioning of nuclear waste.9,10 A number of researchers have investigated … huntley il garage sales